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IRF1407L - Power MOSFET

Datasheet Summary

Description

Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Fig 15. Typical Avalanche Current Vs. Pulsewidth 400 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 10% Duty Cycle ID = 78A 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Av.

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PD -94335 Benefits q q q q q q IRF1407S IRF1407L HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 75V RDS(on) = 0.0078Ω S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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