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IRF1407LPbF - Power MOSFETs

This page provides the datasheet information for the IRF1407LPbF, a member of the IRF1407SPbF Power MOSFETs family.

Datasheet Summary

Description

Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 Fig 15. Typical Avalanche Current Vs. Pulsewidth 1.0E-01 EAR , Avalanche Energy (mJ) 400 300 200 100 0 25 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 78A 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tj.

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Full PDF Text Transcription

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PD -95486 IRF1407SPbF Benefits O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax O Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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