Datasheet4U Logo Datasheet4U.com

IRF1704 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

Specifically designed for Automotive applications, this HEXFET® power MOSFET has a 200°C max operating temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Overview

PD -94012C AUTOMOTIVE MOSFET IRF1704 Benefits l 200°C Operaing Temperature HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 40V l Dynamic dv/dt Rating l Fast Switching l Repetitive Avalanche Allowed G RDS(on) = 0.

Key Features

  • of this HEXFET® power MOSFET are fast switching speed and improved repetitive avalanche rating. The continuing technology leadership of Internationl Rectifier provides 200°C operating temperature in a plastic package. At high ambient temperatures, the IRF1704 can carry up to 20% more current than similar 175 °C Tj max devices in the same package outline. This makes this part ideal for existing and emerging under-the-hood automotive.