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IRF2805LPbF - HEXFET Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l G S ID = 135A†.

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PD - 95944 AUTOMOTIVE MOSFET Typical Applications l l l l l IRF2805SPbF IRF2805LPbF HEXFET® Power MOSFET D Climate Control ABS Electronic Braking Windshield Wipers Lead-Free Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V RDS(on) = 4.7mΩ Features l l l l l G S ID = 135A† Description www.DataSheet4U.com Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .