IRF2805S - AUTOMOTIVE MOSFET

International Rectifier (now Infineon)

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

VDSS = 55V G S RDS(on) = 4.7mΩ ID = 135AV.

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IRF2805S automotive mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRF2805S
Manufacturer	International Rectifier (now Infineon)
File Size	224.32 KB
Description	AUTOMOTIVE MOSFET
Datasheet	IRF2805S Datasheet

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IRF2805SPbF	HEXFET Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 94428 AUTOMOTIVE MOSFET Typical Applications ● ● ● ● IRF2805S IRF2805L HEXFET® Power MOSFET D Climate Control ABS Electronic Braking Windshield Wipers Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Features ● ● ● ● ● VDSS = 55V G S RDS(on) = 4.7mΩ ID = 135AV Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .