IRF2807LPbF Datasheet | International Rectifier

Description l l IRF2807SPb F IRF2807LPb F - 95945 HEXFET® Power MOSFET VDSS = 75V RDS(on) = 13mΩ .. The D2Pak is a surface mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF2807L) is available for lowprofile applications. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ID = 82A‡ D2Pak IRF2807SPb F TO-262 IRF2807LPb F Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 82‡ 58 280 230 1.5 ± 20 43 23 5.9 -55 to + 175 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Units A W W/°C V A m J V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB mount)- - Typ. - - - - - - Max. 0.75 40 Units °C/W .irf. 1/4/05 IRF2807S/LPb F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ...