IRF2807ZS Datasheet | International Rectifier

Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. IRF2807ZL HEXFET® Power MOSFET VDSS = 75V RDS(on) = 9.4mΩ ID = 75A TO-220AB IRF2807Z D2Pak IRF2807ZS TO-262 IRF2807ZL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) c Pulsed Drain Current Maximum Power Dissipation VGS EAS EAS (tested) IAR EAR Linear Derating Factor Gate-to-Source Voltage d Single Pulse Avalanche Energy (Thermally Limited) i Single Pulse Avalanche Energy Tested Value c Avalanche Current h Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient j Junction-to-Ambient (PCB Mount, steady state) HEXFET® is a registered trademark of International Rectifier. .irf. Max. 89 63 75 350 170 1.1 ± 20 160 200 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Typ. -...