IRF3717 Description
20 ± 20 20 16 160 2.5 1.6 0.02 -55 to + 150 Units V c A W W/°C °C Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient Typ. 20 50 Units °C/W f Notes through are on page 10 .irf. 2/20/04 1 IRF3717 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th)...
IRF3717 Key Features
- Synchronous MOSFET for Notebook Processor Power
- Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 20V 4.4m:@VGS = 10V A
- Ultra-Low Gate Impedance
- Very Low RDS(on)
- Fully Characterized Avalanche Voltage and Current S G 6 5 Top View SO-8