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IRF3717 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 95843 IRF3717 HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 20V 4.

Key Features

  • ly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potent.