IRF3805LPbF Datasheet | International Rectifier

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings TO-220AB IRF3805Pb F ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage d Single Pulse Avalanche Energy h Single Pulse Avalanche Energy Tested Value Ù Avalanche Current g Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds i Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA .irf. Parameter k Junction-to-Case i Case-to-Sink, Flat Greased Surface ik Junction-to-Ambient jk Junction-to-Ambient (PCB Mount) IRF3805Pb F IRF3805SPb F IRF3805LPb F HEXFET® Power MOSFET VDSS = 55V RDS(on) = 3.3mΩ ID = 75A D2Pak TO-262 IRF3805SPb F IRF3805LPb F Max. 210 150 75 890 300 2.0 ± 20 650 940 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) y y 10 lbf in (1.1N m) Units A W W/°C V m J A m J °C Typ. - - -...