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IRF530L Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 91352A IRF530NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =100V G S RDS(on) = 0.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

Key Features

  • .110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M B A M 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H.

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More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRF530 Power MOSFET
IRF5305 Power MOSFET
IRF5305L Power MOSFET
IRF5305LPBF HEXFET Power MOSFET
IRF5305PbF Power MOSFET
IRF5305S Power MOSFET
IRF5305SPBF HEXFET Power MOSFET
IRF530N Power MOSFET
IRF530NL HEXFET Power MOSFET
IRF530NLPBF HEXFET Power MOSFET