IRF5M3710 Datasheet (PDF) Download
International Rectifier
IRF5M3710

Description

Fifth Generation HEXFET® power MOSFET technology is the key to IR Hirel utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Key Features

  • Low RDS(on)
  • Avalanche Energy Ratings
  • Dynamic dv/dt Rating
  • Simple Drive Requirements
  • Hermetically Sealed
  • Light Weight TO-254AA