Datasheet Details
| Part number | IRF5M3710 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 915.56 KB |
| Description | 100V N-CHANNEL MOSFET |
| Datasheet |
 IRF5M3710 Datasheet
|
|
|
General Description
Fifth Generation HEXFET® power MOSFET technology is the key to IR Hirel utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.
Key Features
- Low RDS(on).
- Avalanche Energy Ratings.
- Dynamic dv/dt Rating.
- Simple Drive Requirements.
- Hermetically Sealed.
- Light Weight TO-254AA Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy .