Download IRF5M3710 Datasheet PDF
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IRF5M3710 Description

Fifth Generation HEXFET® power MOSFET technology is the key to IR Hirel utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices...

IRF5M3710 Key Features

  • Low RDS(on)
  • Avalanche Energy Ratings
  • Dynamic dv/dt Rating
  • Simple Drive Requirements
  • Hermetically Sealed
  • Light Weight