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IRF5M3710 - 100V N-CHANNEL MOSFET

Description

Fifth Generation HEXFET® power MOSFET technology is the key to IR Hirel utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.

Features

  • Low RDS(on).
  • Avalanche Energy Ratings.
  • Dynamic dv/dt Rating.
  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Light Weight TO-254AA Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy .

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Full PDF Text Transcription

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POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number BVDSS IRF5M3710 100V RDS(on) 0.03 ID 35A* Description Fifth Generation HEXFET® power MOSFET technology is the key to IR Hirel utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
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