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IRF6641TR1PBF - N-Channel HEXFET Power MOSFET

Datasheet Summary

Description

The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile.

Features

  • = 150°C Single Pulse 1 10 100 1msec 1000 Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) , Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 6.0 VDS, Drain-to-Source Voltage (V) 5 4 ID, Drain Current (A) 5.0 3 4.0 ID ID ID ID = 150µA = 250µA = 1.0mA = 1.0A 2 3.0 1 0 25 50 75 100 125 150 TA , Ambient Temperature (°C) 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 200 EAS , Single.

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www.DataSheet4U.com PD - 97262 IRF6641TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l VDSS Qg tot VGS Qgd 9.5nC RDS(on) 51mΩ@ 10V 200V max ±20V max 34nC Vgs(th) 4.0V MZ Applicable DirectFET Outline and Substrate Outline (see p.
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