IRF6655 - DirectFET Power MOSFET Typical values

Product Overview

International Rectifier

Datasheet Details

Part number	IRF6655
Manufacturer	International Rectifier
File Size	283.99 KB
Description	DirectFET Power MOSFET Typical values
Datasheet	IRF6655 Datasheet
Additional preview pages of the IRF6655 datasheet.

Product details

Description

The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile.

Features

sec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100msec 10 T J = -40°C T J = 25°C T J = 150°C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) 1 1msec 10msec 0.1 0.01 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 5 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 5.5 5 4.5 4 3.5 ID = 25µA 3 2.5 2 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °.

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Published: Apr 13, 2010 |