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IRF6655 Datasheet DirectFET Power MOSFET Typical values

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 96926D www.DataSheet4U.com DirectFET™ Power MOSFET ‚ l IRF6655 RDS(on) 53mΩ@ 10V RoHS compliant containing no lead or bromide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for High Performance Isolated Converter Primary Switch Socket l Ideal for Control FET sockets in 36V – 75V in Synchronous Buck applications l Low Conduction Losses l Compatible with existing Surface Mount Techniques  Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST SH MQ MX MT Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 2.8nC 100V max ±20V max 8.7nC Vgs(th) 3.

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General Description

The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Key Features

  • sec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100msec 10 T J = -40°C T J = 25°C T J = 150°C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) 1 1msec 10msec 0.1 0.01 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 5 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 5.5 5 4.5 4 3.5 ID = 25µA 3 2.5 2 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °.

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