Datasheet Details
| Part number | IRF6662PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 271.77 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6662PBF Datasheet
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General Description
The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Key Features
- e-Drain Diode Forward Voltage 10 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 7.0 ID = 100µA ID = 250µA 8 ID, Drain Current (A) 6.0 ID = 1.0mA ID = 1.0A 6 5.0 4 4.0 2 3.0 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 160 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 1.6.