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IRF6718L2TR1PBF - DirectFET Power MOSFET

This page provides the datasheet information for the IRF6718L2TR1PBF, a member of the IRF6718L2TRPBF DirectFET Power MOSFET family.

Datasheet Summary

Description

The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a D-pak.

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Full PDF Text Transcription

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PD - 97395E IRF6718L2TRPbF l RoHS Compliant Containing No Lead and Bromide  l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Very Low RDS(ON) for Reduced Conduction Losses l Optimized for Active O-Ring / Efuse Applications l Compatible with existing Surface Mount Techniques  IRF6718L2TR1PbF DirectFET® Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 0.50mΩ@10V 1.0mΩ@4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 64nC 20nC 9.4nC 67nC 50nC 1.
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