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IRF7306 Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

Overview

PD - 9.1241C IRF7306 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -30V RDS(on) = 0.

Key Features

  • 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X Part Marking Information SO-8 E X A M P LE : T H IS IS A N IR F 7101 D A TE C O DE (Y W W ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK XX X X W AFER LO T C O D E (L A S T 4 D IG IT S ) 312 IN T E R N A T IO N A L R E C T IF I E R LO G O F 7 101 TOP P A R T N UM B E R B O T TO M IRF7306 Tape & Reel Information SO-8 Dimensions are shown in millimeters (inches) 1.85 (.072) 4.10 ( .161 ) 1.65 (.065) 3.90 ( .154 ) 1.60 (.062) 1.50 (.059) 0.

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