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IRF7342D2PBF - MOSFET & Schottky Diode

General Description

l FETKY MOSFET & Schottky Diode A A S G 1 2 3 4 8 7 6 5 TM K K D D VDSS = -55V RDS(on) = 105mΩ Schottky Vf = 0.61V Top View The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management ap

Key Features

  • hottky Diode Characteristics 100 Thermal Response(Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 95299 IRF7342D2PbF Co-packaged HEXFET® Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l SO-8 Footprint l Lead-Free Description l FETKY MOSFET & Schottky Diode A A S G 1 2 3 4 8 7 6 5 TM K K D D VDSS = -55V RDS(on) = 105mΩ Schottky Vf = 0.61V Top View The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.