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IRF7401 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 9.1244C IRF7401 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S S S G 1 8 7 A A D D D D 2 VDSS = 20V RDS(on) = 0.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

Key Features

  • .255 ) 1.78 (.070) 8X Part Marking Information SO-8 EXAM PLE : TH IS IS AN IR F7 101 D ATE C O DE (YW W ) Y = LAST D IGIT O F TH E YEAR W W = W EEK XXXX W AFER LO T C O D E (LAST 4 D IG ITS) 31 2 IN TER N ATIO N AL R EC TIF IER LO G O F710 1 TOP PAR T N UM BER BO TTO M IRF7401 Tape & Reel Information SO-8 Dimensions are shown in millimeters (inches) 1.85 (.07 2) 4.1 0 (.1 61 ) 1.65 (.06 5) 3.9 0 (.1 54 ) 1.60 (.0 62 ) 1.50 (.0 59 ) 0 .35 (.01 3) 0 .25 (.01 0) T E R M IN AT IO N N U MBE.

IRF7401 Distributor

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