Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Features
- .255 )
1.78 (.070) 8X
Part Marking Information
SO-8
EXAM PLE : TH IS IS AN IR F7 101 D ATE C O DE (YW W ) Y = LAST D IGIT O F TH E YEAR W W = W EEK XXXX W AFER LO T C O D E (LAST 4 D IG ITS)
31 2 IN TER N ATIO N AL R EC TIF IER LO G O F710 1
TOP
PAR T N UM BER
BO TTO M
IRF7401
Tape & Reel Information
SO-8 Dimensions are shown in millimeters (inches)
1.85 (.07 2) 4.1 0 (.1 61 ) 1.65 (.06 5) 3.9 0 (.1 54 ) 1.60 (.0 62 ) 1.50 (.0 59 ) 0 .35 (.01 3) 0 .25 (.01 0)
T E R M IN AT IO N N U MBE.