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IRF7404QPBF - Power MOSFET

Datasheet Summary

Description

These HEXFET® Power MOSFET's in package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

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Full PDF Text Transcription

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END OF LIFE IRF7404QPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free S1 S2 S3 G4 8 7 6 5 Top View Description These HEXFET® Power MOSFET's in package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications.
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