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IRF7410PBF Datasheet Hexfet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -12V PD - 96028B IRF7410PbF HEXFET® Power MOSFET RDS(on) max 7mΩ@VGS = -4.5V 9mΩ@VGS = -2.5V 13mΩ@VGS = -1.8V ID -16A -13.6A -11.

General Description

These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing S 1 techniques to achieve the extremely low on-resistance S 2 per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery S 3 and load management applications..

G4 8 A D 7D 6D 5D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

IRF7410PBF Distributor