IRF7410PBF Description
These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing S 1 techniques to achieve the extremely low on-resistance S 2 per silicon area. This benefit provides the designer with an extremely efficient device for use in battery S 3 and load management applications.. G4 8 A D 7D 6D 5D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and...
IRF7410PBF Key Features
- P-Channel MOSFET
- Surface Mount
- Available in Tape & Reel