IRF7410PBF - HEXFET Power MOSFET

International Rectifier (now Infineon)

General Description

techniques to achieve the extremely low on-resistance S 2 per silicon area.

IRF7410PBF hexfet power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRF7410PBF
Manufacturer	International Rectifier (now Infineon)
File Size	210.86 KB
Description	HEXFET Power MOSFET
Datasheet	IRF7410PBF Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
IRF7410PBF-1	Power MOSFET
IRF7410	HEXFET Power MOSFET
IRF7410GPbF	HEXFET Power MOSFET
IRF7410TRPBF-1	Power MOSFET
IRF7413	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -12V PD - 96028B IRF7410PbF HEXFET® Power MOSFET RDS(on) max 7mΩ@VGS = -4.5V 9mΩ@VGS = -2.5V 13mΩ@VGS = -1.8V ID -16A -13.6A -11.5A Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing S 1 techniques to achieve the extremely low on-resistance S 2 per silicon area. This benefit provides the designer with an extremely efficient device for use in battery S 3 and load management applications.. G4 8 A D 7D 6D 5D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.