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IRF7416PBF - Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Full PDF Text Transcription for IRF7416PBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF7416PBF. For precise diagrams, and layout, please refer to the original PDF.

PD - 95137A l Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Le...

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Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRF7416PbF HEXFET® Power MOSFET S 1 S 2 S 3 G 4 A 8 D 7 D 6 D 5 D Top View VDSS = -30V RDS(on) = 0.

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