IRF7457 Description
20 ± 20 15 12 120 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/°C °C Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. 20 50 Units °C/W Notes through are on page 8 .irf. 1 3/25/01 IRF7457 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRF7457 Key Features
- High Frequency DC-DC Isolated Converters with Synchronous Rectification for Tele and Industrial use
- IRF7457 HEXFET® Power MOSFET VDSS 20V RDS(on) max 7.0mΩ ID 15A High Frequency Buck Converters for puter Pr
- Ultra-Low RDS(on)
- Very Low Gate Impedance
- Fully Characterized Avalanche Voltage and Current S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w