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IRF7473 - Power MOSFET

Datasheet Summary

Features

  • ive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 16mH RG = 25Ω, IAS = 4.1A.
  • When mounted on 1 inch square copper board … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS † ISD ≤ 4.1A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
  • Pulse width ≤ 400µs; duty cycle ≤ 2%. Data and specifications subject to change without notice. This product has been designed and qualified for th.

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PD- 94037A IRF7473 HEXFET® Power MOSFET Applications l Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterrutible Power Supply Benefits l Ultra Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche Voltage and Current Typical SMPS Topologies l Full and Half Bridge 48V input Circuit l Forward 24V input Circuit Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Tem
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