Datasheet4U Logo Datasheet4U.com

IRF7473PBF - HEXFET Power MOSFET

Key Features

  • RMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 16mH RG = 25Ω, IAS = 4.1A.
  • When mounted on 1 inch square copper board … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS † ISD ≤ 4.1A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
  • Pulse width ≤ 400µs; duty cycle ≤ 2%. Data and specifications subject to change without notice. This pr.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD- 95559 IRF7473PbF Applications l Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterrutible Power Supply l Lead-Free Benefits l Ultra Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche Voltage and Current Typical SMPS Topologies l Full and Half Bridge 48V input Circuit l Forward 24V input Circuit Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperatur