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IRF7480MTRPBF - Power MOSFET

Key Features

  • -Source Voltage (V) Fig 12. Typical Coss Stored Energy RDS(on), Drain-to -Source On Resistance (m) 4.5 4.0 Vgs = 5.5V Vgs = 6.0V Vgs = 7.0V 3.5 Vgs = 8.0V Vgs = 10V 3.0 2.5 2.0 1.5 1.0 0.5 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www. irf. com © 2015 International Rectifier Submit Datasheet Feedback May 14, 2015    10 IRF7480MTRPbF Thermal Response ( ZthJC ) °C/W 1 0.1 0.01 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters Benefits  Improved Gate, Avalanche and Dynamic dv/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dv/dt and di/dt Capability  Lead-Free, RoHS Compliant StrongIRFET™ IRF7480MTRPbF DirectFET® N-Channel Power MOSFET  VDSS RDS(on) typ. max ID (Silicon Limited) 40V 0.95m 1.