Datasheet4U Logo Datasheet4U.com

IRF7524D1 - FETKY MOSFET

Description

The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications.

Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 8X 0.38 8X ( .015 ) 3.2 0 ( .126 ) 4.2 4 5.2 8 ( .167 ) ( .2 08 ) N O TE S : 1 DIME N S ION IN G A N D T O L E RA N C IN G P E R A N S I Y 1 4 .5M -1 9 8 2 . 2 CO N T R OL L IN G DIME N S ION : INC H . 3 DIME N S ION S D O N O T INC L U D E M O L D F L A S H . 0.65 6X ( .02 56 ) Part Marking www. irf. com 7 IRF7524D1 Micro8TM Tape & Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E ED D IR E C TIO N N OTES: 1 . O U T L IN E C O N.

📥 Download Datasheet

Datasheet preview – IRF7524D1

📁 Similar Datasheet

  • IRF750 - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF750A - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF750A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF710 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF710 - N-Channel MOSFET (INCHANGE)
  • IRF710 - N-Channel MOSFET (ART CHIP)
  • IRF710 - Power MOSFET (Vishay)
  • IRF710A - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF710A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF710B - 400V N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD -91648C PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint IRF7524D1 8 FETKYTM MOSFET & Schottky Diode l l l l l A A S G 1 K K D D 2 7 VDSS = -20V RDS(on) = 0.27Ω Schottky Vf = 0.39V 3 6 4 5 Description T op V ie w The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Published: |