IRF7530 Overview
New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package has half the footprint...
IRF7530 Key Features
- Trench Technology
- Ultra Low On-Resistance S1
- Dual N-Channel MOSFET G1
- Very Small SOIC Package
- Low Profile (<1.1mm) S2