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PD-93760C
IRF7530
l Trench Technology
l Ultra Low On-Resistance
S1
l Dual N-Channel MOSFET
G1
l Very Small SOIC Package
l Low Profile (<1.1mm)
S2
l Available in Tape & Reel
G2
Description
New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8 package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.
IRF7530 Datasheet
