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IRF7752GPBF - Power MOSFET

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Description

HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

  • t us at www. irf. com for sales contact information.05/2008 8 www. irf. com www. DataSheet. in.

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PD- 96151 IRF7752GPbF l l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free Halogen-Free HEXFET® Power MOSFET VDSS 30V RDS(on) max 0.030@VGS = 10V 0.036@VGS = 4.5V ID 4.6A 3.9A Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner ' ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB & % $ 'Ã2Ã9! &Ã2ÃT! %Ã2ÃT! $Ã2ÃB! with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package, has 45% less footprint area of the standard SO-8.
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