Description
These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.
The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.
Features
- IRF7807 IRF7807A
Vds 30V 30V
Rds(on) 25mΩ 25mΩ
Qg 17nC 17nC
Qsw
5.2nC
Qoss 16.8nC 16.8nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS ≥ 4.5V) Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
Symbol VDS VGS I
D
IDM PD
TJ, TSTG I
S
ISM
IRF7807
IRF7807A
30
±12
8.3 8.3
6.6 6.6
66 66
2.5
1.6.
IRF7807APbF Datasheet
