Description
The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.
Features
- (Max Values)
VDS RDS(on) Qg QSW Qoss
IRF7807D2 30V
25mΩ 14nC 5.2nC 21.6nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS ≥ 4.5V) Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Schottky and Body Diode
25°C
Average ForwardCurrent.
- 70°C
Junction & Storage Temperature Range
Symbol V
DS
VGS ID
IDM PD
IF (AV)
TJ, TSTG
Max. 30 ±12 8.3 6.6 66 2.5 1.6 3.7 2.3.
- 55 to 150
Units V
A
W A °C.
IRF7807D2PbF Datasheet
