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IRF7807D2PbF - MOSFET / SCHOTTKY DIODE

General Description

The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.

Overview

PD- 95436A IRF7807D2PbF • Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky.

Key Features

  • (Max Values) VDS RDS(on) Qg QSW Qoss IRF7807D2 30V 25mΩ 14nC 5.2nC 21.6nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Schottky and Body Diode 25°C Average ForwardCurrent.
  • 70°C Junction & Storage Temperature Range Symbol V DS VGS ID IDM PD IF (AV) TJ, TSTG Max. 30 ±12 8.3 6.6 66 2.5 1.6 3.7 2.3.
  • 55 to 150 Units V A W A °C.