IRF7842TRPbF Description
© 2014 International Rectifier Typ. 20 50 Units °C/W Submit Datasheet Feedback July 8, 2014 IRF7842PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS gfs Qg...
IRF7842TRPbF Key Features
- Synchronous MOSFET for Notebook Processor Power
- Secondary Synchronous Rectification for Isolated DC-DC Converters
- Synchronous Fet for Non-Isolated DC-DC Converters
- Lead-Free Benefits
- Very Low RDS(on) at 4.5V VGS
- Low Gate Charge
- Fully Characterized Avalanche Voltage and Current IRF7842PbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ