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IRF7901D1 - Dual MOSFET

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General Description

The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.

Advanced HEXFET®MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable for a wide variety of portable electronics applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple die capability making it ideal in a variety of power applications.

Overview

PD- 93844B IRF7901D1 • Co-Pack Dual N-channel HEXFET® Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 5A Peak Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Q1 S ource Q1 Gate PGND 1 2 3 4 Dual FETKY™ Co-Packaged Dual MOSFET Plus Schottky Diode Device Ratings (Max.Values) Q1 8 7 6 5 Pwr Vin Pwr Vin Pwr Vout Pwr Vout Q2 and Schottky VDS RDS(on) QG Qsw VSD 30V 38 mΩ 10.5 nC 3.8 nC 1.0V 30V 32 mΩ 18.3 nC 9.0 nC 0.

Key Features

  • n) vs Gate-to-Source Voltage DS Figure 9. Typical R (on) vs Gate-to-Source Voltage DS 30 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 20 VGS 10V 8.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP 50 40 30 VGS 10V 8.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP 20 0.0V 250µs PULSE WIDTH Tj = 25°C 0.0 0.4 0.8 1.2 10 0.0V 250µs PULSE WIDTH Tj = 25°C 0.0 0.4 0.8 1.2 1.6 2.0 10 0 0 VSD , Source-To-Drain Voltage (V) DS , Drain-toSource Voltage (V) V , Source-T.

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