Description
The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.
Features
- n) vs Gate-to-Source Voltage
DS
Figure 9. Typical R (on) vs Gate-to-Source Voltage
DS
30
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
20
VGS 10V 8.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP
50
40
30
VGS 10V 8.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP
20 0.0V 250µs PULSE WIDTH Tj = 25°C 0.0 0.4 0.8 1.2
10 0.0V 250µs PULSE WIDTH Tj = 25°C 0.0 0.4 0.8 1.2 1.6 2.0
10
0
0
VSD , Source-To-Drain Voltage (V) DS , Drain-toSource Voltage (V)
V , Source-T.
IRF7901D1 Datasheet
