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IRF7910PBF - Power MOSFET

Features

  • 6 ) 12.40 ( .488 ) Note: For the most current drawing please refer to IR website at: http://www. irf. com/package/ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 3.2mH RG = 25Ω, IAS = 8.0A.
  • Pulse width ≤ 300µs; duty cycle ≤ 2%.
  • When mounted on 1 inch square copper board, t.

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Full PDF Text Transcription

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PD - 95336A IRF7910PbF Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications l Power Management for Netcom, Computing and Portable Applications l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current VDSS 12V HEXFET® Power MOSFET RDS(on) max 15mΩ @VGS = 4.5V ID 10A S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.
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