IRF7910PBF Overview
42 62.5 Units °C/W 1 07/21/08 IRF7910PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 8.0 Units mJ A Diode...
IRF7910PBF Key Features
- High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Net and puting Applications
- Power Management for Net, puting and Portable Applications
- Lead-Free Benefits
- Ultra-Low Gate Impedance
- Very Low RDS(on)
- Fully Characterized Avalanche Voltage and Current VDSS 12V HEXFET® Power MOSFET RDS(on) max 15mΩ @VGS = 4.5