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IRF8707GPbF - Power MOSFET

General Description

The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.

The IRF8707GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses.

Key Features

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96264 IRF8707GPbF Applications HEXFET® Power MOSFET l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking VDSS RDS(on) max Qg :30V 11.9m @VGS = 10V 6.2nC Systems Benefits l Very Low Gate Charge l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% tested for Rg S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 l Lead-Free l Halogen-Free Description The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.