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IRF8788PBF - Power MOSFET

Datasheet Summary

Description

The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.

The IRF8788PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses.

Features

  • ons are shown in milimeters (inches) B 5 DIM A A1 b INCH E S MIN .0532 .0040 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MIL L IME T E R S MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 B AS IC .025 B AS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 B AS IC 0.635 B AS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e K L y e1 A K x 45° C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 C A B 8X L 7.

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Full PDF Text Transcription

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www.DataSheet4U.com PD - 97137A IRF8788PbF Applications Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l HEXFET® Power MOSFET VDSS RDS(on) max Qg 30V 2.8m:@VGS = 10V 44nC A A D D D D Benefits l l l l l l l Very Low Gate Charge Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating 100% tested for Rg Lead-Free S S S G 1 2 3 4 8 7 6 5 Top View SO-8 Description The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.
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