IRF8788PBF
Description
The IRF8788Pb F incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8788Pb F has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Net applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ±20 24 19 190 2.5 1.6 0.02 -55 to + 150
Units
V c
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
W W/°C °C
Thermal Resistance
RθJL RθJA g Junction-to-Ambient fg
Junction-to-Drain...
