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IRF8788PBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: .. PD - 97137A IRF8788PbF Applications Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l HEXFET® Power MOSFET VDSS RDS(on) max Qg 30V 2.8m:@VGS = 10V 44nC A A D D D D Benefits l l l l l l l Very Low Gate Charge Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max.

General Description

The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.

The IRF8788PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses.

The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Net applications.

Key Features

  • ons are shown in milimeters (inches) B 5 DIM A A1 b INCH E S MIN .0532 .0040 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MIL L IME T E R S MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 B AS IC .025 B AS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 B AS IC 0.635 B AS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e K L y e1 A K x 45° C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 C A B 8X L 7.

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