IRF9Z14S Overview
l l D VDSS = -60V RDS(on) = 0.50Ω G S ID = -6.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety...
IRF9Z14S Key Features
- Low-profile through-hole (IRF9Z14L)
- 175°C Operating Temperature
- Fast Switching
- P- Channel
