Datasheet Details
| Part number | IRF9Z14S |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 361.79 KB |
| Description | Power MOSFET |
| Datasheet | IRF9Z14S_InternationalRectifier.pdf |
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Overview: PD - 9.911A IRF9Z14S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z14S) l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche.
| Part number | IRF9Z14S |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 361.79 KB |
| Description | Power MOSFET |
| Datasheet | IRF9Z14S_InternationalRectifier.pdf |
|
|
|
l l D VDSS = -60V RDS(on) = 0.50Ω G S ID = -6.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRF9Z14S | Power MOSFET | Vishay |
|
IRF9Z14 | Power MOSFET | Vishay |
|
IRF9Z14L | Power MOSFET | Vishay |
| Part Number | Description |
|---|---|
| IRF9Z14 | Power MOSFET |
| IRF9Z20 | P-Channel MOSFET |
| IRF9Z22 | P-Channel MOSFET |
| IRF9Z24 | POWER MOSFET |
| IRF9Z24L | Power MOSFET |
| IRF9Z24N | Power MOSFET |
| IRF9Z24NL | Power MOSFET |
| IRF9Z24NLPBF | Power MOSFET |
| IRF9Z24NPBF | HEXFET Power MOSFET |
| IRF9Z24NS | Power MOSFET |