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IRFAG50 - N-Channel MOSFET

General Description

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.

Key Features

  • Repetitive Avalanche Ratings.
  • Dynamic dv/dt Rating.
  • Hermetically Sealed.
  • Simple Drive Requirements Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche En.

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Full PDF Text Transcription for IRFAG50 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRFAG50. For precise diagrams, and layout, please refer to the original PDF.

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRFAG50 1000V RDS(on) 2.0 ID 5.6A PD- 90582A IRFAG50 1000V...

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mber BVDSS IRFAG50 1000V RDS(on) 2.0 ID 5.6A PD- 90582A IRFAG50 1000V, N-CHANNEL Description HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.

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