IRFB260N Overview
PD - 94270 SMPS MOSFET IRFB260N HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.040Ω ID 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. 0.40 62 Units °C/W Notes through are on page 8 .irf. 1 8/29/01 IRFB260N Static @ TJ = 25°C (unless otherwise specified) Parameter...
IRFB260N Key Features
- Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.040Ω ID 56A Benefits Low Gate-to-Drai
- Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
- Fully Characterized Avalanche Voltage and Current
- TO-220AB
