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IRFB260NPBF - HEXFET Power MOSFET

Key Features

  • /µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
  • Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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PD - 95473 SMPS MOSFET IRFB260NPbF l l HEXFET® Power MOSFET Applications High frequency DC-DC converters Lead-Free VDSS 200V RDS(on) max 0.040Ω ID 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.