Datasheet4U Logo Datasheet4U.com

IRFB3077GPBF - Power MOSFET

Key Features

  • ed for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFB3077 N-Channel MOSFET INCHANGE
IRFB3004 N-Channel MOSFET INCHANGE
IRFB3006 N-Channel MOSFET INCHANGE
IRFB31N20D N-Channel MOSFET INCHANGE
IRFB3206 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFB3077PBF Power MOSFET
IRFB3004GPbF Power MOSFET
IRFB3004PBF Power MOSFET
IRFB3006GPBF Power MOSFET
IRFB3006PBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 96200 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free G IRFB3077GPbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 75V 2.8m: 3.