IRFB3256PbF Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

IRFB3256PbF hexfet power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRFB3256PbF
Manufacturer	International Rectifier (now Infineon)
File Size	264.31 KB
Description	HEXFET Power MOSFET
Download	IRFB3256PbF Download (PDF)

Overview

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate,.

Key Features

ower dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 15. Maximum.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRFB3206	Power MOSFET
IRFB3206GPbF	HEXFET Power MOSFET
IRFB3206PBF	Power MOSFET
IRFB3207	Power MOSFET
IRFB3207PBF	Power MOSFET
IRFB3207ZGPbF	HEXFET Power MOSFET
IRFB3207ZPBF	Power MOSFET
IRFB3004GPbF	Power MOSFET
IRFB3004PBF	Power MOSFET
IRFB3006GPBF	Power MOSFET