IRFB3306GPbF Datasheet | International Rectifier

- 96211 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic d V/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d V/dt and d I/dt Capability l Lead-Free l Halogen-Free IRFB3306GPb F HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 3.3m: 4.2m: c160A S ID (Package Limited) 120A DS G TO-220AB IRFB3306GPb F G Gate Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Wire Bond Limited) d Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage f Peak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR e Single Pulse Avalanche Energy Ãd Avalanche Current d Repetitive Avalanche Energy Thermal Resistance Symbol...