IRFB3307 Datasheet | International Rectifier

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic d V/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d V/dt and d I/dt Capability - 96901C IRFB3307 IRFS3307 IRFSL3307 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 75V 5.0m: 6.3m: 130A TO-220AB IRFB3307 D2Pak IRFS3307 TO-262 IRFSL3307 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V d Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage f Peak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics e EAS (Thermally limited) Single Pulse Avalanche Energy ÙIAR Avalanche Current g EAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter k Junction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 k Junction-to-Ambient, TO-220 jk Junction-to-Ambient (PCB Mount) ,...