IRFB3307PbF Datasheet | International Rectifier

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic d V/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d V/dt and d I/dt Capability l Lead-Free - 95706D IRFB3307Pb F IRFS3307Pb F IRFSL3307Pb F HEXFET® Power MOSFET D VDSS RDS(on) typ. 75V 5.0m: :G max. 6.3m S ID 120A TO-220AB IRFB3307Pb F D2Pak IRFS3307Pb F TO-262 IRFSL3307Pb F Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Continuous Drain Current, VGS @ 10V d Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR e Single Pulse Avalanche Energy ÙAvalanche Current g Repetitive Avalanche Energy Thermal Resistance Symbol RJC Parameter k Junction-to-Case RCS RJA RJA Case-to-Sink, Flat Greased Surface , TO-220 k Junction-to-Ambient, TO-220 jk Junction-to-Ambient (PCB Mount) , D2Pak Max. 120™l 84™l 510 l200 l1.3 ± 20 -55 to + 175 300 x x10lb in (1.1N m) 270 See Fig. 14, 15, 16a,...