IRFB3507 - (IRFx3507) HEXFET Power MOSFET

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International Rectifier

Part number	IRFB3507
Manufacturer	International Rectifier
File Size	439.39 KB
Description	(IRFx3507) HEXFET Power MOSFET
Datasheet	IRFB3507 Datasheet
Additional preview pages of the IRFB3507 datasheet.

voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3.
BV.
Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
BV.
Zth] E.

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Published: Mar 27, 2007 |