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IRFB4019PBF - DIGITAL AUDIO MOSFET

General Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.

This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Key Parameters Optimized for Class-D Audio Amplifier.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 97075 DIGITAL AUDIO MOSFET Features • Key Parameters Optimized for Class-D Audio Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved Efficiency • Low QRR for Better THD and Lower EMI • 175°C Operating Junction Temperature for Ruggedness • Can Deliver up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier G S D IRFB4019PbF Key Parameters 150 80 13 5.1 2.4 175 D VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max V m: nC nC Ω °C G D S TO-220AB D S G Description Gate Drain Source This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.