IRFB4019PBF Description
Gate Drain Source This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI.
IRFB4019PBF Key Features
- Key Parameters Optimized for Class-D Audio Amplifier
IRFB4019PBF Applications
- Low RDSON for Improved Efficiency
- Low QG and QSW for Better THD and Improved Efficiency
- Low QRR for Better THD and Lower EMI
- 175°C Operating Junction Temperature for Ruggedness
- Can Deliver up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier