IRFB4019PBF Datasheet | International Rectifier

Features - Key Parameters Optimized for Class-D Audio Amplifier Applications - Low RDSON for Improved Efficiency - Low QG and QSW for Better THD and Improved Efficiency - Low QRR for Better THD and Lower EMI - 175°C Operating Junction Temperature for Ruggedness - Can Deliver up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier IRFB4019Pb F Key Parameters 150 80 13 5.1 2.4 175 VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max V m: n C n C Ω °C TO-220AB Description Gate Drain Source This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features bine to make this MOSFET a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation f Power Dissipation f Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 300 10lbxin (1.1Nxm) Max. 150 ±20 17 12 51 80 40 0.5 -55 to + 175 Units W W/°C °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case f Case-to-Sink, Flat, Greased Surface Junction-to-Ambient f Typ. - - - 0.50 - - - Max. 1.88 -...