IRFB4020PBF
Overview
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
- Key parameters optimized for Class-D audio amplifier applications
- Low RDSON for improved efficiency
- Low QG and QSW for better THD and improved efficiency
- Low QRR for better THD and lower EMI
- 175°C operating junction temperature for ruggedness
- Can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier G S
- IRFB4020PbF Key Parameters
