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IRFB4103PBF - DIGITAL AUDIO MOSFET

General Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.

This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Key parameters optimized for Class-D audio amplifier.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96909 DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI • 175°C operating junction temperature for ruggedness • Can deliver up to 300W per channel into 8Ω load in half-bridge topology G S D IRFB4103PbF Key Parameters 200 139 25 15 1.0 175 V m: nC nC Ω °C www.DataSheet4U.com VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max TO-220AB Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.