Datasheet4U Logo Datasheet4U.com

IRFB4212PbF - Digital Audiio MOSFET

Datasheet Summary

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.

This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Key parameters optimized for Class-D audio amplifier.

📥 Download Datasheet

Datasheet preview – IRFB4212PbF

📁 Similar Datasheet

  • IRFB4212 - N-Channel MOSFET (INCHANGE)
  • IRFB4227 - N-Channel MOSFET (INCHANGE)
  • IRFB4228 - N-Channel MOSFET (INCHANGE)
  • IRFB4229 - N-Channel MOSFET (INCHANGE)
  • IRFB42N20D - N-Channel MOSFET (INCHANGE)
  • IRFB4019 - N-Channel MOSFET (INCHANGE)
  • IRFB4020 - N-Channel MOSFET (INCHANGE)
  • IRFB4110 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFB4110G - N-Channel MOSFET (INCHANGE)
  • IRFB4115 - N-Channel MOSFET (INCHANGE)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 96918A DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI • 175°C operating junction temperature for ruggedness • Can deliver up to 150W per channel into 4Ω load in half-bridge topology G S IRFB4212PbF Key Parameters 100 72.5 15 8.3 2.2 175 D VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max V m: nC nC Ω °C TO-220AB Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Published: |