IRFB4212PbF Datasheet | International Rectifier

Features - Key parameters optimized for Class-D audio amplifier applications - Low RDSON for improved efficiency - Low QG and QSW for better THD and improved efficiency - Low QRR for better THD and lower EMI - 175°C operating junction temperature for ruggedness - Can deliver up to 150W per channel into 4Ω load in half-bridge topology IRFB4212Pb F Key Parameters 100 72.5 15 8.3 2.2 175 VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max V m: n C n C Ω °C TO-220AB Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features bine to make this MOSFET a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation f Power Dissipation f Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 300 10lbxin (1.1Nxm) Max. 100 ±20 18 13 57 60 30 0.4 -55 to + 175 Units W W/°C °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case f Case-to-Sink, Flat, Greased Surface Junction-to-Ambient f Typ. - - - 0.50 - - - Max. 2.5 - - - 62 °C/W Units Notes  through … are on page 2 .irf. 9/16/05 IRFB4212Pb F BV DSS ∆Β V DSS/∆ T J R DS(on) V GS(th) ∆ V GS(th)/∆ T J IDSS IGSS g fs Qg Q gs1 Q gs2 Q gd Q godr Q...