IRFB4332PBF Datasheet | International Rectifier

Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability IRFB4332Pb F Key Parameters 250 300 29 120 175 VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100°C TJ max V V m: A °C TO-220AB Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features bine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Gate Drain Source Absolute Maximum Ratings Parameter VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repetitive Peak Current g Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) Typ. - - - 0.50 - - - Max. 0.38 - - - 62 N Units °C/W Max. ±30 60 42 230 120 390 200 2.6 -40 to + 175 Units W W/°C °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case f Case-to-Sink, Flat, Greased Surface Junction-to-Ambient f Notes  through … are on page 8 .irf. 6/5/06 IRFB4332Pb F Electrical...